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A key feature of a molecular beam is that the molecules move at nearly the same, albeit extremely high, velocity.

They achieve this feat by directly slowing a fast-moving molecular beam and subsequently loading the molecules into a trap generated by electric currents flowing in superconducting magnets.

Such a low operational temperature was key to ensuring that the materials remained in the superconducting phase during the rapid switching of large currents that was needed to stop the slowed molecular beam at the centre of the trap.

We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor.

Kaun, S. W., Wong, M. H., Mishra, U. K. & Speck, J. S. Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy.